RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
| dc.citation.epage | 495 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 493 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Huang, C. C. | en_US |
| dc.contributor.author | Chiang, K. C. | en_US |
| dc.contributor.author | Kao, H. L. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Chen, W. J. | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:15:53Z | |
| dc.date.available | 2014-12-08T15:15:53Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime. | en_US |
| dc.identifier.doi | 10.1109/LMWC.2006.880709 | en_US |
| dc.identifier.issn | 1531-1309 | en_US |
| dc.identifier.journal | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LMWC.2006.880709 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11866 | |
| dc.identifier.wosnumber | WOS:000240446000005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | capacitor | en_US |
| dc.subject | International Technology Roadmap for Semiconductors (ITRS) | en_US |
| dc.subject | metal-insulator-metal (MIM) | en_US |
| dc.subject | radio frequency integrated circuit (RF IC) | en_US |
| dc.subject | SrTiO3 | en_US |
| dc.title | RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density | en_US |
| dc.type | Article | en_US |