An anomalous crossover in Vth roll-off for indium-doped nMOSFETs
| dc.citation.epage | 459 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 457 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chang, SJ | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.author | Chen, CM | en_US |
| dc.contributor.author | Chou, JW | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:54Z | |
| dc.date.available | 2014-12-08T15:44:54Z | |
| dc.date.issued | 2000-09-01 | en_US |
| dc.description.abstract | The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 mu m channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation. | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30310 | |
| dc.identifier.wosnumber | WOS:000089132500013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | indium | en_US |
| dc.subject | SSR | en_US |
| dc.title | An anomalous crossover in Vth roll-off for indium-doped nMOSFETs | en_US |
| dc.type | Article | en_US |