10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths

Abstract

InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 mu m emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature is increased from room temperature to 70 degrees C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36GHz, which is appropriate for 10Gb/s operation. The maximal bandwidth is measured to be 10.7GHz With a modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA) 1/2. Bit error rates of less than 10(-12) are demonstrated for 10 Gb/s data transmission from 25 degrees C to 70'C. We also accumulated life test data up to 1000 h at 70 degrees C/10 mA.