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Dependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTs

dc.citation.epage1324en_US
dc.citation.issue12en_US
dc.citation.spage1322en_US
dc.citation.volume29en_US
dc.citation.woscount6
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorKuo, Yan-Fuen_US
dc.contributor.authorLee, Yun-Hsiangen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:10:35Z
dc.date.available2014-12-08T15:10:35Z
dc.date.issued2008-12-01en_US
dc.description.abstractIn this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.en_US
dc.identifier.doi10.1109/LED.2008.2006414en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2006414en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8086
dc.identifier.wosnumberWOS:000262062000011
dc.language.isoen_USen_US
dc.subjectDC stressen_US
dc.subjectleakage currenten_US
dc.subjectphotosensitivityen_US
dc.subjectpoly-Si thin-film transistor (TFT)en_US
dc.titleDependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTsen_US
dc.typeArticleen_US

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