Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
| dc.citation.epage | 141 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 139 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Sheu, Jeng-Tzong | en_US |
| dc.contributor.author | Huang, Po-Chun | en_US |
| dc.contributor.author | Sheu, Tzu-Shiun | en_US |
| dc.contributor.author | Chen, Chen-Chia | en_US |
| dc.contributor.author | Chen, Lu-An | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:04Z | |
| dc.date.available | 2014-12-08T15:10:04Z | |
| dc.date.issued | 2009-02-01 | en_US |
| dc.description.abstract | We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH(3) plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 10(8)), and a virtual absence of drain-induced barrier lowering (1.3 mV/V). | en_US |
| dc.identifier.doi | 10.1109/LED.2008.2009956 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2009956 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7681 | |
| dc.identifier.wosnumber | WOS:000262861600014 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Gate-all-around (GAA) | en_US |
| dc.subject | nanowire (NW) | en_US |
| dc.subject | plasma treatment | en_US |
| dc.subject | short-channel effects (SCEs) | en_US |
| dc.subject | thin-film transistor (TFT) | en_US |
| dc.title | Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors | en_US |
| dc.type | Article | en_US |