Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
| dc.citation.epage | en_US | |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chu, Min-Ching | en_US |
| dc.contributor.author | Meena, Jagan Singh | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Shieh, Han-Ping D. | en_US |
| dc.contributor.author | You, Hsin-Chiang | en_US |
| dc.contributor.author | Tu, Yen-Wei | en_US |
| dc.contributor.author | Chang, Feng-Chih | en_US |
| dc.contributor.author | Ko, Fu-Hsiang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:32:05Z | |
| dc.date.available | 2014-12-08T15:32:05Z | |
| dc.date.issued | 2013-07-01 | en_US |
| dc.description.abstract | A change in the charge carrier density of zinc oxide (ZnO) films for control the functioning of thin-film transistors (TFTs) has been studied by oxygen (O-2) plasma techniques. This effect was interpreted in terms of a threshold voltage shift and the variation in carrier mobility. The plasma-surface interaction on the molecular level and the behavioral characterization of ZnO films were investigated by X-ray photospectroscopy of the O 1s region. This process was highly sensitive at low level variations in defect and doping density. O-2 plasma treatment leads to a shift of turn-on voltage and a reduction of the off-current by more than two orders of magnitude in ZnO-TFTs. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.6.076501 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.6.076501 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22610 | |
| dc.identifier.wosnumber | WOS:000321699300042 | |
| dc.language.iso | en_US | en_US |
| dc.title | Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors | en_US |
| dc.type | Article | en_US |