A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR
| dc.citation.epage | 224 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 222 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | LIU, YF | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:22Z | |
| dc.date.available | 2014-12-08T15:06:22Z | |
| dc.date.issued | 1983 | en_US |
| dc.identifier.issn | 0018-9200 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4941 | |
| dc.identifier.wosnumber | WOS:A1983QS53700012 | |
| dc.language.iso | en_US | en_US |
| dc.title | A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR | en_US |
| dc.type | Letter | en_US |