Evolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrate
| dc.citation.epage | R171 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | R169 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, Chien-Chih | en_US |
| dc.contributor.author | Hsiao, Feng Ching | en_US |
| dc.contributor.author | Lin, Bo-Wen | en_US |
| dc.contributor.author | Hsu, Wen-Ching | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:31:43Z | |
| dc.date.available | 2014-12-08T15:31:43Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {4 (1) over bar(3) over bar 18} and the disappearance of bottom c-plane. (C) 2013 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/2.022309jss | en_US |
| dc.identifier.issn | 2162-8769 | en_US |
| dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.022309jss | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22435 | |
| dc.identifier.wosnumber | WOS:000321620800026 | |
| dc.language.iso | en_US | en_US |
| dc.title | Evolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrate | en_US |
| dc.type | Article | en_US |