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Gap-Type a-Si TFTs for Front Light Sensing Application

dc.citation.epage683en_US
dc.citation.issue12en_US
dc.citation.spage679en_US
dc.citation.volume7en_US
dc.citation.woscount3
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChou, Lu-Shengen_US
dc.contributor.authorChiu, Hao-Linen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:20:32Z
dc.date.available2014-12-08T15:20:32Z
dc.date.issued2011-12-01en_US
dc.description.abstractThe photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.en_US
dc.identifier.doi10.1109/JDT.2011.2164054en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2011.2164054en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/14624
dc.identifier.wosnumberWOS:000296748200001
dc.language.isoen_USen_US
dc.subjectAmorphous gap-gate thin-film transistor (TFT)en_US
dc.subjectlight sensoren_US
dc.titleGap-Type a-Si TFTs for Front Light Sensing Applicationen_US
dc.typeArticleen_US

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