120-nm bandwidth erbium-doped fiber amplifier in parallel configuration
| dc.citation.epage | 1639 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1637 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Yeh, CH | en_US |
| dc.contributor.author | Lee, CC | en_US |
| dc.contributor.author | Chi, S | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:53Z | |
| dc.date.available | 2014-12-08T15:38:53Z | |
| dc.date.issued | 2004-07-01 | en_US |
| dc.description.abstract | A new S- to L-band erbium-doped fiber amplifier (EDFA) module, which reaches 120-nm gain bandwidth of 1480 to 1600 nm, has been experimentally investigated and demonstrated by using coupled structure. A 32.8-, 34.7-, and 38.1-dB peak gain is obtained at 1504, 1532, and 1568 nm, respectively, when the input signal power is -30 dBm. In addition, this proposed amplifier also provides a broad-band amplified spontaneous emission (ASE) light source of 1480-1606 nm with the output level above -40 dBm. | en_US |
| dc.identifier.doi | 10.1109/LPT.2004.828357 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2004.828357 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26629 | |
| dc.identifier.wosnumber | WOS:000222278900011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | coupled structure | en_US |
| dc.subject | erbium-doped fiber amplifier (EDFA) | en_US |
| dc.subject | S-band | en_US |
| dc.subject | wavelength-division-multiplexing (WDM) systems | en_US |
| dc.subject | wide-band | en_US |
| dc.title | 120-nm bandwidth erbium-doped fiber amplifier in parallel configuration | en_US |
| dc.type | Article | en_US |