Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
| dc.citation.epage | en_US | |
| dc.citation.issue | 10 | en_US |
| dc.citation.volume | 94 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Hu, Chih-Wei | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Tu, Chun-Hao | en_US |
| dc.contributor.author | Shueh, Pei-Kun | en_US |
| dc.contributor.author | Lin, Chao-Cheng | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.author | Tseng, Tseung-Yuen | en_US |
| dc.contributor.author | Chen, Min-Chen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:47Z | |
| dc.date.available | 2014-12-08T15:09:47Z | |
| dc.date.issued | 2009-03-09 | en_US |
| dc.description.abstract | Co nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi(2) film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi(2) film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi(2) film has been demonstrated. | en_US |
| dc.identifier.doi | 10.1063/1.3097810 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3097810 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7495 | |
| dc.identifier.wosnumber | WOS:000264280000042 | |
| dc.language.iso | en_US | en_US |
| dc.subject | annealing | en_US |
| dc.subject | cobalt compounds | en_US |
| dc.subject | nanofabrication | en_US |
| dc.subject | oxidation | en_US |
| dc.subject | protective coatings | en_US |
| dc.subject | random-access storage | en_US |
| dc.subject | sputtering | en_US |
| dc.subject | transmission electron microscopy | en_US |
| dc.subject | X-ray photoelectron spectra | en_US |
| dc.title | Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory | en_US |
| dc.type | Article | en_US |