Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics
| dc.citation.epage | 1533 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1531 | en_US |
| dc.citation.volume | 84 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Wang, JC | en_US |
| dc.contributor.author | Shie, DC | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Lee, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:29Z | |
| dc.date.available | 2014-12-08T15:39:29Z | |
| dc.date.issued | 2004-03-01 | en_US |
| dc.description.abstract | The capacitance-voltage (C-V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C-V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1644616 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1644616 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26960 | |
| dc.identifier.wosnumber | WOS:000189264100033 | |
| dc.language.iso | en_US | en_US |
| dc.title | Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics | en_US |
| dc.type | Article | en_US |