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General method to solution-process multilayer polymer light-emitting diodes

dc.citation.epageen_US
dc.citation.issue16en_US
dc.citation.volume88en_US
dc.citation.woscount38
dc.contributor.authorTseng, SRen_US
dc.contributor.authorLin, SCen_US
dc.contributor.authorMeng, HFen_US
dc.contributor.authorLiao, HHen_US
dc.contributor.authorYeh, CHen_US
dc.contributor.authorLai, HCen_US
dc.contributor.authorHorng, SFen_US
dc.contributor.authorHsu, CSen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2014-12-08T15:16:49Z
dc.date.available2014-12-08T15:16:49Z
dc.date.issued2006-04-17en_US
dc.description.abstractAn intermediate liquid buffer layer is introduced to overcome the dissolution problem of solution-processed multilayer conjugated polymer light-emitting diodes. This method can be applied to arbitrary combinations of polymers with no restriction on solvents. As an example, a hole-blocking layer is successfully spin coated on the common p-type emissive polymer layers. One green- and two blue-emitting polymers are chosen as the emissive layers. The electron-hole balance and efficiency are significantly improved by the addition of hole-blocking layer. The electroluminescence efficiency can be increased up to nine times, while the luminance up to seven times. In particular, 1.5 cd/A is obtained for deep blue emission from poly(9,9-dioctyl-fluorene) with 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene spin coated as the hole-blocking material. (c) 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2192574en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2192574en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12360
dc.identifier.wosnumberWOS:000236969300101
dc.language.isoen_USen_US
dc.titleGeneral method to solution-process multilayer polymer light-emitting diodesen_US
dc.typeArticleen_US

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