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EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS

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dc.citation.epageL1399en_US
dc.citation.issue10Aen_US
dc.citation.spageL1397en_US
dc.citation.volume32en_US
dc.citation.woscount6
dc.contributor.authorCHEN, HRen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorTSAI, KLen_US
dc.contributor.authorTSANG, JSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:04:20Z
dc.date.available2014-12-08T15:04:20Z
dc.date.issued1993-10-01en_US
dc.description.abstractThe potential spike energy at the emitter junction of AlGaAs/GaAs heterostructure emitter bipolar transistors (HEBT) was directly measured for the first time. Experimental data revealed that emitter thickness as thin as 300 angstrom is thick enough to eliminate potential spike without compositional grading. It is found that the band bending in n-GaAs reduces the potential spike and hence very low offset voltage of 70 mV with high current gain of 150 can be obtained.en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2842
dc.identifier.wosnumberWOS:A1993MC04400009
dc.language.isoen_USen_US
dc.subjectHEBTen_US
dc.subjectPOTENTIAL SPIKEen_US
dc.subjectBAND BENDINGen_US
dc.subjectOFFSET VOLTAGEen_US
dc.titleEVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORSen_US
dc.typeArticleen_US

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