Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions
| dc.citation.epage | 77 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 75 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Liu, S. L. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:16Z | |
| dc.date.available | 2014-12-08T15:10:16Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | We report low-threshold-voltage (V(t)) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degrees C. The gate-first and self-aligned TaN/HflLaO n-MOSFETs using Ni/Sb SPID-formed source-drain junctions showed a low Vt of 0.16 V and a peak electron mobility of 187 cm(2)/V . s at a small 1.3-nm equivalent oxide thickness. | en_US |
| dc.identifier.doi | 10.1109/LED.2008.2009011 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2009011 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7837 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions | en_US |
| dc.type | Article | en_US |
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