Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress
| dc.citation.epage | 504 | en_US |
| dc.citation.spage | 503 | en_US |
| dc.contributor.author | Lu, Hau-Yan | en_US |
| dc.contributor.author | Chung, Wan-Fang | en_US |
| dc.contributor.author | Tseng, Tzu-Yi | en_US |
| dc.contributor.author | Chen, Yu-Cheng | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Chi, Sien | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:01Z | |
| dc.date.available | 2014-12-08T15:12:01Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | The influence of protrusion grain boundary on the degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress is investigated. The degradation of TFT with protrusion grain boundary is more severe and the different damage of the source/drain junction in the TFT with grain boundary closed to source side. | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9212 | |
| dc.identifier.wosnumber | WOS:000258177700129 | |
| dc.language.iso | en_US | en_US |
| dc.title | Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress | en_US |
| dc.type | Proceedings Paper | en_US |
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