Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

dc.citation.epage	5689	en_US
dc.citation.issue	33	en_US
dc.citation.spage	5686	en_US
dc.citation.volume	52	en_US
dc.contributor.author	Chou, Yi-Chia	en_US
dc.contributor.author	Panciera, Federico	en_US
dc.contributor.author	Reuter, Mark C.	en_US
dc.contributor.author	Stach, Eric A.	en_US
dc.contributor.author	Ross, Frances M.	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.date.accessioned	2017-04-21T06:55:43Z
dc.date.available	2017-04-21T06:55:43Z
dc.date.issued	2016	en_US
dc.description.abstract	We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols tominimize effects of the higher pressure background gas.	en_US
dc.identifier.doi	10.1039/c6cc00303f	en_US
dc.identifier.issn	1359-7345	en_US
dc.identifier.journal	CHEMICAL COMMUNICATIONS	en_US
dc.identifier.uri	http://dx.doi.org/10.1039/c6cc00303f	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/133690
dc.identifier.wosnumber	WOS:000374349900007	en_US
dc.language.iso	en_US	en_US
dc.title	Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy	en_US

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