VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
| dc.citation.epage | 224 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 219 | en_US |
| dc.citation.volume | 137 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | CHANG, CS | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:33Z | |
| dc.date.available | 2014-12-08T15:05:33Z | |
| dc.date.issued | 1990-06-01 | en_US |
| dc.identifier.issn | 0956-3768 | en_US |
| dc.identifier.journal | IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4095 | |
| dc.identifier.wosnumber | WOS:A1990DE42000006 | |
| dc.language.iso | en_US | en_US |
| dc.title | VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE | en_US |
| dc.type | Article | en_US |