Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films
| dc.citation.epage | 11560 | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 11555 | en_US |
| dc.citation.volume | 54 | en_US |
| dc.citation.woscount | 37 | en_US |
| dc.contributor.author | Tsai, CT | en_US |
| dc.contributor.author | Chen, SH | en_US |
| dc.contributor.author | Chuu, DS | en_US |
| dc.contributor.author | Chou, WC | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:38:51Z | |
| dc.date.available | 2019-04-03T06:38:51Z | |
| dc.date.issued | 1996-10-15 | en_US |
| dc.description.abstract | Highly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.54.11555 | en_US |
| dc.identifier.issn | 0163-1829 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.54.11555 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149356 | |
| dc.identifier.wosnumber | WOS:A1996VT67500083 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films | en_US |
| dc.type | Article | en_US |