Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Abstract

Red-green-blue (RGB) full-color micro light-emitting diodes (mu-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN mu-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar mu-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm(2 )injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar mu-LEDs' emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020). (C) 2020 Chinese Laser Press