Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process
| dc.citation.epage | 237 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 235 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chen, JH | en_US |
| dc.contributor.author | Wang, MF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:40Z | |
| dc.date.available | 2014-12-08T15:46:40Z | |
| dc.date.issued | 1999-05-01 | en_US |
| dc.description.abstract | This work prepares and demonstrates, for the first time, a high-quality polysilicon oxide, by combining N2O nitridation and Chemical Mechanical Polishing (CMP) process. Our results demonstrate that capacitors with this process have an improved Q(bd) (charge-to-breakdown) due to the planar surface and more concentrated nitrogen at the interface of polysilicon oxide. | en_US |
| dc.identifier.doi | 10.1109/55.761025 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.761025 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31378 | |
| dc.identifier.wosnumber | WOS:000080066700014 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhancement of integrity of polysilicon oxide by using a combination of N2O nitridation and CMP process | en_US |
| dc.type | Article | en_US |