A Cu-based alloyed ohmic contact system on n-type GaAs
| dc.citation.epage | en_US | |
| dc.citation.issue | 23 | en_US |
| dc.citation.volume | 91 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, Ke-Shian | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Lin, Chia-Ching | en_US |
| dc.contributor.author | Lee, Cheng-Shih | en_US |
| dc.contributor.author | Huang, Wei-Ching | en_US |
| dc.contributor.author | Lee, Ching-Ting | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:59Z | |
| dc.date.available | 2014-12-08T15:12:59Z | |
| dc.date.issued | 2007-12-03 | en_US |
| dc.description.abstract | An alloyed Pd/Ge/Cu Ohmic contact to n-type GaAs is reported for the first time. The Pd/Ge/Cu Ohmic contact exhibited a very low specific contact resistance of 5.73x10(-7) Omega cm(2) at a low annealing temperature of 250 degrees C. This result is comparable to the reported Pd/Ge and Au/Ge/Ni Ohmic contact systems to n-type GaAs with doping concentrations about 1x10(18) cm(-3). The Ohmic contact formation mechanisms and microstructure evolution were investigated using secondary ion mass spectrometry, x-ray diffraction, transmission electron microscopy, and energy dispersive spectrometer. The Ohmic contact behavior was related to the formation of Cu(3)Ge and PdGa(x)As(y) compounds after annealing. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2819687 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2819687 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10016 | |
| dc.identifier.wosnumber | WOS:000251450600112 | |
| dc.language.iso | en_US | en_US |
| dc.title | A Cu-based alloyed ohmic contact system on n-type GaAs | en_US |
| dc.type | Article | en_US |