AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Abstract

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (similar to 10(4)-10(5) cm(-2)) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (similar to 60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility mu(eff) of similar to 1456 cm(2)V(-1)s(-1). Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaNHEMTsare promising candidate for next generation high power device applications. (C) 2017 Author(s).