High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium-Gallium-Zinc-Oxide Thin-Film Transistor
| dc.citation.epage | 79 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 77 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Chen, Wei-Tsung | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:21:10Z | |
| dc.date.available | 2014-12-08T15:21:10Z | |
| dc.date.issued | 2012-01-01 | en_US |
| dc.description.abstract | A light-erasable memory and a real-time ultraviolet (UV) detector were developed from an amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistor fabricated at room temperature without post-annealing. The natural defects within the IGZO or at the dielectric interface serve as electron traps to support a writing operation (switching down the channel conductance). A negative gate bias accompanied by UV illumination performs an erasing operation (switching up the channel conductance). After the writing/erasing of the proposed memory, an on/off ratio greater than 10(4) was maintained for a testing duration of 10 000 s. A real-time UV detector was also developed, and a light/dark ratio of roughly 10(4) was demonstrated. | en_US |
| dc.identifier.doi | 10.1109/LED.2011.2171316 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2171316 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15022 | |
| dc.identifier.wosnumber | WOS:000298380300025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Indium-gallium-zinc-oxide (IGZO) | en_US |
| dc.subject | memory | en_US |
| dc.subject | photodetector and room temperature | en_US |
| dc.title | High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium-Gallium-Zinc-Oxide Thin-Film Transistor | en_US |
| dc.type | Article | en_US |