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Simulations of mask error enhancement factor in 193nm immersion lithography

dc.citation.epage2496en_US
dc.citation.issue4Aen_US
dc.citation.spage2481en_US
dc.citation.volume45en_US
dc.citation.woscount3
dc.contributor.authorYeh, KTen_US
dc.contributor.authorLoong, WAen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:17:01Z
dc.date.available2014-12-08T15:17:01Z
dc.date.issued2006-04-01en_US
dc.description.abstractIn general, better resolution and lower mask error enhancement factor (MEEF) are obtained when a higher numerical aperture (NA) is used. However, simulations in this study show that, if Y-polarized light and off-axis illuminations were used, higher NA leads to higher MEEF for smaller and dense feature line sizes in 193nm immersion lithography. The reversal of the MEEF was clearly observed, especially in the presence of a dipole. When the feature size decreased to the resolution limit, the MEEF rose enormously. Simulations also show that the MEEF is inversely proportional to the cubic root of image contrast in most cases in this study.en_US
dc.identifier.doi10.1143/JJAP.45.2481en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.2481en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12455
dc.identifier.wosnumberWOS:000237098800019
dc.language.isoen_USen_US
dc.subjectmask error enhancement factoren_US
dc.subjectimmersion lithographyen_US
dc.subjectimage contrasten_US
dc.subjectoff-axis illuminationen_US
dc.subjectpolarized lighten_US
dc.titleSimulations of mask error enhancement factor in 193nm immersion lithographyen_US
dc.typeArticleen_US

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