INVESTIGATION OF SI-SIO2 INTERFACE PROPERTIES FOR BONDED SILICON-ON-INSULATOR
| dc.citation.epage | 1507 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 1506 | en_US |
| dc.citation.volume | 12 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | YEH, CF | en_US |
| dc.contributor.author | KAO, HW | en_US |
| dc.contributor.author | CHANG, BS | en_US |
| dc.contributor.author | CHANG, KL | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:20Z | |
| dc.date.available | 2014-12-08T15:04:20Z | |
| dc.date.issued | 1993-10-01 | en_US |
| dc.identifier.issn | 0261-8028 | en_US |
| dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2846 | |
| dc.identifier.wosnumber | WOS:A1993MB24100007 | |
| dc.language.iso | en_US | en_US |
| dc.title | INVESTIGATION OF SI-SIO2 INTERFACE PROPERTIES FOR BONDED SILICON-ON-INSULATOR | en_US |
| dc.type | Article | en_US |
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