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Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode

dc.citation.epage5518en_US
dc.citation.issue19en_US
dc.citation.spage5515en_US
dc.citation.volume39en_US
dc.citation.woscount0
dc.contributor.authorWu, J. -Y.en_US
dc.contributor.authorLu, P. -K.en_US
dc.contributor.authorHsiao, Y. -J.en_US
dc.contributor.authorLin, S. -D.en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:36:56Z
dc.date.available2014-12-08T15:36:56Z
dc.date.issued2014-10-01en_US
dc.description.abstractWe experimentally demonstrate the use of single-photon avalanche photodiode (SPAD) for radiometric temperature measurement. The low dark count rate CMOS SPAD and a commercial InGaAs/InP SPAD can detect the thermal radiation from a blackbody down to the temperatures of 510 and 405 K, respectively. Our work shows that current SPADs are cost-effective thermal sensors for various applications. (C) 2014 Optical Society of Americaen_US
dc.identifier.doi10.1364/OL.39.005515en_US
dc.identifier.issn0146-9592en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.39.005515en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/25345
dc.identifier.wosnumberWOS:000343906400012
dc.language.isoen_USen_US
dc.titleRadiometric temperature measurement with Si and InGaAs single-photon avalanche photodiodeen_US
dc.typeArticleen_US

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