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THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)

dc.citation.epage284en_US
dc.citation.issue2en_US
dc.citation.spage280en_US
dc.citation.volume26en_US
dc.citation.woscount11
dc.contributor.authorHONG, JWen_US
dc.contributor.authorCHEN, YWen_US
dc.contributor.authorLAIH, WLen_US
dc.contributor.authorFANG, YKen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorGONG, Cen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:39Z
dc.date.available2014-12-08T15:05:39Z
dc.date.issued1990-02-01en_US
dc.identifier.doi10.1109/3.44959en_US
dc.identifier.issn0018-9197en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/3.44959en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4183
dc.identifier.wosnumberWOS:A1990CQ81400014
dc.language.isoen_USen_US
dc.titleTHE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)en_US
dc.typeArticleen_US

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