Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition
| dc.citation.epage | 1476 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 1473 | en_US |
| dc.citation.volume | 116 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Liu, Shiu-Jen | en_US |
| dc.contributor.author | Su, Shih-Hao | en_US |
| dc.contributor.author | Juang, Jenh-Yih | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:41Z | |
| dc.date.available | 2014-12-08T15:36:41Z | |
| dc.date.issued | 2014-09-01 | en_US |
| dc.description.abstract | Room-temperature ferromagnetism (RTFM) was observed in pulsed-laser deposited amorphous In-Ga-Zn-O (a-IGZO) films undoped with impurities containing unpaired d or f electrons. The presence of oxygen vacancies in the prepared a-IGZO films was verified by X-ray photoelectron spectroscopy and suggested to be responsible for the observed RTFM. The electrical and optical properties of the a-IGZO films were also investigated. | en_US |
| dc.identifier.doi | 10.1007/s00339-014-8263-0 | en_US |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00339-014-8263-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25035 | |
| dc.identifier.wosnumber | WOS:000340583500074 | |
| dc.language.iso | en_US | en_US |
| dc.title | Room-temperature ferromagnetism in amorphous In-Ga-Zn-O films fabricated by using pulsed-laser deposition | en_US |
| dc.type | Article | en_US |