High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
| dc.citation.epage | 294 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 292 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Hung, B. F. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Wang, S. J. | en_US |
| dc.contributor.author | Wang, X. P. | en_US |
| dc.contributor.author | Li, M. -F. | en_US |
| dc.contributor.author | Zhu, C. | en_US |
| dc.contributor.author | Yen, F. Y. | en_US |
| dc.contributor.author | Hou, Y. T. | en_US |
| dc.contributor.author | Jin, Y. | en_US |
| dc.contributor.author | Tao, H. J. | en_US |
| dc.contributor.author | Chen, S. C. | en_US |
| dc.contributor.author | Liang, M. S. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:22Z | |
| dc.date.available | 2014-12-08T15:14:22Z | |
| dc.date.issued | 2007-04-01 | en_US |
| dc.description.abstract | We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. | en_US |
| dc.identifier.doi | 10.1109/LED.2007.892367 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.892367 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10973 | |
| dc.identifier.wosnumber | WOS:000245225300012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | HfLaON | en_US |
| dc.subject | Ir3Si | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | work function | en_US |
| dc.title | High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate | en_US |
| dc.type | Article | en_US |