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Fast Scan-Chain Ordering for 3-D-IC Designs Under Through-Silicon-Via (TSV) Constraints

dc.citation.epage1174en_US
dc.citation.issue6en_US
dc.citation.spage1170en_US
dc.citation.volume21en_US
dc.citation.woscount0
dc.contributor.authorLiao, Christina C-H.en_US
dc.contributor.authorChen, Allen W. -T.en_US
dc.contributor.authorLin, Louis Y. -Z.en_US
dc.contributor.authorWen, Charles H. -P.en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.date.accessioned2014-12-08T15:31:30Z
dc.date.available2014-12-08T15:31:30Z
dc.date.issued2013-06-01en_US
dc.description.abstractThis brief addresses the problem of scan-chain ordering under a limited number of through-silicon vias (TSVs), and proposes a fast two-stage algorithm to compute a final order of scan flip-flops. To enable 3-D optimization, a greedy algorithm, multiple fragment heuristic, is modified and combined with a dynamic closest-pair data structure, FastPair, to derive a good initial solution in stage one. Stage two initiates two local refinement techniques, 3-D planarization and 3-D relaxation, to reduce the wire (and/or power) cost and to relax the number of TSVs in use to meet TSV constraints, respectively. Experimental results show that the proposed algorithm results in comparable performance (in terms of wire cost only, power cost only, and both wire-and-power cost) to a genetic-algorithm method but runs two-order faster, which makes it practical for TSV-constrained scan-chain ordering for 3-D-IC designs.en_US
dc.identifier.doi10.1109/TVLSI.2012.2204781en_US
dc.identifier.issn1063-8210en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2012.2204781en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22349
dc.identifier.wosnumberWOS:000319473000016
dc.language.isoen_USen_US
dc.subject3-D ICen_US
dc.subjectscan testingen_US
dc.subjectthrough-silicon via (TSV)en_US
dc.titleFast Scan-Chain Ordering for 3-D-IC Designs Under Through-Silicon-Via (TSV) Constraintsen_US
dc.typeArticleen_US

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