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A NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFET

dc.citation.epage1431en_US
dc.citation.issue9en_US
dc.citation.spage1421en_US
dc.citation.volume31en_US
dc.citation.woscount25
dc.contributor.authorJANG, WYen_US
dc.contributor.authorWU, CYen_US
dc.contributor.authorWU, HJen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:57Z
dc.date.available2014-12-08T15:05:57Z
dc.date.issued1988-09-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4489
dc.identifier.wosnumberWOS:A1988Q280800011
dc.language.isoen_USen_US
dc.titleA NEW EXPERIMENTAL-METHOD TO DETERMINE THE SATURATION VOLTAGE OF A SMALL-GEOMETRY MOSFETen_US
dc.typeArticleen_US

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