Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE
| dc.citation.epage | en_US | |
| dc.citation.issue | en_US | |
| dc.citation.volume | 9 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chen, Wei-Chun | en_US |
| dc.contributor.author | Wu, Yue-Han | en_US |
| dc.contributor.author | Peng, Chun-Yen | en_US |
| dc.contributor.author | Hsiao, Chien-Nan | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:36:07Z | |
| dc.date.available | 2014-12-08T15:36:07Z | |
| dc.date.issued | 2014-05-01 | en_US |
| dc.description.abstract | InxAl1-xN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAI) flow ratios on the structural, morphological, and optical properties of InxAl1-xN films. Surface morphologies and microstructure of the InxAl1-xN films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that InxAl1-xN films were preferentially oriented in the c-axis direction. Besides, the growth rates of InxAl1-xN films were measured at around 0.6 mu m/h in average. Reflection spectrum shows that the optical absorption of the InxAl1-xN films redshifts with an increase in the In composition. | en_US |
| dc.identifier.doi | 10.1186/1556-276X-9-204 | en_US |
| dc.identifier.issn | 1556-276X | en_US |
| dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-9-204 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24462 | |
| dc.identifier.wosnumber | WOS:000336035400001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | InAlN | en_US |
| dc.subject | In/Al ratios | en_US |
| dc.subject | RF-MOMBE | en_US |
| dc.title | Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE | en_US |
| dc.type | Article | en_US |