Mode emission characteristics of semiconductor microdisc and microring lasers
| dc.citation.epage | 1341 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1335 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lee, TD | en_US |
| dc.contributor.author | Cheng, PH | en_US |
| dc.contributor.author | Pan, JS | en_US |
| dc.contributor.author | Tai, K | en_US |
| dc.contributor.author | Lai, Y | en_US |
| dc.contributor.author | Lin, W | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:19Z | |
| dc.date.available | 2014-12-08T15:02:19Z | |
| dc.date.issued | 1996-10-01 | en_US |
| dc.description.abstract | We fabricate both microdisc and microring InGaAsP-InGaAs quantum well semiconductor lasers using an etching-and-bonding technique. Their emission properties are studied by optical pumping at 77 K. Single mode lasing is achieved for discs with a diameter of 5 mu m. Multimode emission is observed for rings with larger diameters. Both fundamental and higher order lasing modes are observed and are found to exhibit interesting emission characteristics. | en_US |
| dc.identifier.issn | 0306-8919 | en_US |
| dc.identifier.journal | OPTICAL AND QUANTUM ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1001 | |
| dc.identifier.wosnumber | WOS:A1996VM79500013 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mode emission characteristics of semiconductor microdisc and microring lasers | en_US |
| dc.type | Article | en_US |
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