A NEW APPROACH TO MODEL CMOS LATCHUP
| dc.citation.epage | 1653 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1642 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | YANG, YH | en_US |
| dc.contributor.author | CHANG, C | en_US |
| dc.contributor.author | CHANG, CC | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:15Z | |
| dc.date.available | 2014-12-08T15:06:15Z | |
| dc.date.issued | 1985 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4824 | |
| dc.identifier.wosnumber | WOS:A1985ARZ8600003 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW APPROACH TO MODEL CMOS LATCHUP | en_US |
| dc.type | Article | en_US |