MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE
| dc.citation.epage | 255 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 251 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHIOU, BS | en_US |
| dc.contributor.author | RAU, HL | en_US |
| dc.contributor.author | CHANG, PH | en_US |
| dc.contributor.author | DUH, JG | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:04Z | |
| dc.date.available | 2014-12-08T15:06:04Z | |
| dc.date.issued | 1987-07-01 | en_US |
| dc.identifier.doi | 10.1007/BF02653362 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/BF02653362 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4634 | |
| dc.identifier.wosnumber | WOS:A1987J352900005 | |
| dc.language.iso | en_US | en_US |
| dc.title | MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE | en_US |
| dc.type | Article | en_US |
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