Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 864 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Zhuravlev, K. S. | en_US |
| dc.contributor.author | Gulyaev, D. V. | en_US |
| dc.contributor.author | Aleksandrov, I. A. | en_US |
| dc.contributor.author | Malin, T. V. | en_US |
| dc.contributor.author | Mansurov, V. G. | en_US |
| dc.contributor.author | Galitsyn, Yu G. | en_US |
| dc.contributor.author | Konfederatova, K. A. | en_US |
| dc.contributor.author | Chen, Yen-Chun | en_US |
| dc.contributor.author | Chang, Wen-Hao | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:48:01Z | |
| dc.date.available | 2019-04-03T06:48:01Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra. | en_US |
| dc.identifier.doi | 10.1088/1742-6596/864/1/012007 | en_US |
| dc.identifier.issn | 1742-6588 | en_US |
| dc.identifier.journal | 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/1742-6596/864/1/012007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/146240 | |
| dc.identifier.wosnumber | WOS:000437783500007 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy | en_US |
| dc.type | Proceedings Paper | en_US |