Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical-vapor deposition
| dc.citation.epage | 12427 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 12421 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 17 | en_US |
| dc.contributor.author | Wu, PH | en_US |
| dc.contributor.author | Lin, DS | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2019-04-03T06:35:46Z | |
| dc.date.available | 2019-04-03T06:35:46Z | |
| dc.date.issued | 1998-05-15 | en_US |
| dc.description.abstract | This study investigates the growth processes of Si on Si(100)-(2x1) during ultrahigh vacuum chemical vapor deposition using disilane as the source gas. The evolution of surface morphology and atomic ordering during growth at temperatures between 300 and 600 degrees C is examined in real time by high-temperature scanning tunneling microscopy. Directly imaging various growth kinetic processes, such as pure step-flow growth, double step-flow growth, two-dimensional nucleation growth, and surface passivation at different substrate temperature ranges clearly illustrates the growth mechanisms for the model chemical vapor deposition growth system and provides interesting comparison with results of Monte Carlo simulations and those of solid phase molecular-beam epitaxy. [S0163-1829(98)05619-7]. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.57.12421 | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.57.12421 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32616 | |
| dc.identifier.wosnumber | WOS:000073761500092 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical-vapor deposition | en_US |
| dc.type | Article | en_US |