Dummy-gate structure to improve turn-on speed of silicon-controlled rectifier (SCR) device for effective electrostatic discharge (ESD) protection
| dc.citation.epage | L1368 | en_US |
| dc.citation.issue | 11B | en_US |
| dc.citation.spage | L1366 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Ker, MD | en_US |
| dc.contributor.author | Hsu, KC | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:40:07Z | |
| dc.date.available | 2014-12-08T15:40:07Z | |
| dc.date.issued | 2003-11-15 | en_US |
| dc.description.abstract | Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially, in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure. | en_US |
| dc.identifier.doi | 10.1143/JJAP.42.L1366 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.L1366 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27393 | |
| dc.identifier.wosnumber | WOS:000187509400007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | dummy gate | en_US |
| dc.subject | silicon controlled rectifier (SCR) | en_US |
| dc.subject | substrate-triggered technique | en_US |
| dc.subject | electrostatic discharge (ESD) | en_US |
| dc.subject | ESD protection | en_US |
| dc.title | Dummy-gate structure to improve turn-on speed of silicon-controlled rectifier (SCR) device for effective electrostatic discharge (ESD) protection | en_US |
| dc.type | Article | en_US |