Double-Pattern Textured ZnO:Ga Thin Films Fabricated by an APPJ and an DC Sputtering

Abstract

Here, double-pattern textured gallium doped zinc oxide (GZO) films were achieved by inserting organosilicon underlayers deposited from an atmospheric pressure plasma jet (APPJ) between sputtered GZO films and glass substrates. The electro-optical characteristics of the textured GZO films were controlled by the haze of organosilicon underlayers. All GZO films were thermally annealed in high vacuum to improve film quality. Post-annealed textured GZO films exhibited an average optical transmittance of about 80% in a wide range. Hall measurements showed Hall mobility above 26 cm(2)/V-s, carrier concentration around 2.4 x 10(20) cm(-3) and resistivity below 9.91 x 10(-4) Omega-cm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003203ssl] All rights reserved.