Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
| dc.citation.epage | en_US | |
| dc.citation.issue | 17 | en_US |
| dc.citation.volume | 99 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Yu, H. W. | en_US |
| dc.contributor.author | Chang, E. Y. | en_US |
| dc.contributor.author | Yamamoto, Y. | en_US |
| dc.contributor.author | Tillack, B. | en_US |
| dc.contributor.author | Wang, W. C. | en_US |
| dc.contributor.author | Kuo, C. I. | en_US |
| dc.contributor.author | Wong, Y. Y. | en_US |
| dc.contributor.author | Nguyen, H. Q. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:20:42Z | |
| dc.date.available | 2014-12-08T15:20:42Z | |
| dc.date.issued | 2011-10-24 | en_US |
| dc.description.abstract | The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 degrees C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 degrees C not only improves the surface morphology (roughness: 1.1 nm) but also reduces the anti-phase domains' (APDs) density in GaAs epitaxy (dislocation density: similar to 2 x 10(7) cm(-2)). Moreover, the unwanted interdiffusion between Ge and GaAs epitaxy is suppressed by using the graded-temperature arsenic prelayer due to the low energy of the Ge-As bond and the use of a low V/III ratio of 20. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656737] | en_US |
| dc.identifier.doi | 10.1063/1.3656737 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3656737 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/14724 | |
| dc.identifier.wosnumber | WOS:000296518400025 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy | en_US |
| dc.type | Article | en_US |