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SCATTERING MECHANISMS OF THE HALL-EFFECT AND TRANSVERSE MAGNETORESISTANCE IN NON-DEGENERATE PIEZOELECTRIC SEMICONDUCTORS

dc.citation.epage100en_US
dc.citation.issue2en_US
dc.citation.spage90en_US
dc.citation.volume3en_US
dc.citation.woscount1
dc.contributor.authorWU, CCen_US
dc.contributor.authorLIN, CJen_US
dc.contributor.authorTSAI, Jen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:00Z
dc.date.available2014-12-08T15:06:00Z
dc.date.issued1988-02-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4554
dc.identifier.wosnumberWOS:A1988M142800004
dc.language.isoen_USen_US
dc.titleSCATTERING MECHANISMS OF THE HALL-EFFECT AND TRANSVERSE MAGNETORESISTANCE IN NON-DEGENERATE PIEZOELECTRIC SEMICONDUCTORSen_US
dc.typeArticleen_US

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