Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
| dc.citation.epage | 393 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 389 | en_US |
| dc.citation.volume | 529 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tseng, Hsueh-Chih | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Cheng, Kai-Hung | en_US |
| dc.contributor.author | Huang, Jheng-Jie | en_US |
| dc.contributor.author | Chen, Yu-Ting | en_US |
| dc.contributor.author | Jian, Fu-Yen | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Chu, Ann-Kuo | en_US |
| dc.contributor.author | Wang, Ying-Lang | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:55Z | |
| dc.date.available | 2014-12-08T15:29:55Z | |
| dc.date.issued | 2013-02-01 | en_US |
| dc.description.abstract | This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2012.09.031 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2012.09.031 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21455 | |
| dc.identifier.wosnumber | WOS:000315928000084 | |
| dc.language.iso | en_US | en_US |
| dc.subject | ReRAM | en_US |
| dc.subject | BON | en_US |
| dc.subject | BON:Gd | en_US |
| dc.subject | Interface type | en_US |
| dc.subject | NDR | en_US |
| dc.title | Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory | en_US |
| dc.type | Article | en_US |