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Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

dc.citation.epage1100en_US
dc.citation.issue8en_US
dc.citation.spage1098en_US
dc.citation.volume32en_US
dc.citation.woscount16
dc.contributor.authorWang, C. H.en_US
dc.contributor.authorLin, D. W.en_US
dc.contributor.authorLee, C. Y.en_US
dc.contributor.authorTsai, M. A.en_US
dc.contributor.authorChen, G. L.en_US
dc.contributor.authorKuo, H. T.en_US
dc.contributor.authorHsu, W. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorChi, G. C.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:28:53Z
dc.date.available2014-12-08T15:28:53Z
dc.date.issued2011-08-01en_US
dc.description.abstractThe efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.en_US
dc.identifier.doi10.1109/LED.2011.2153176en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2153176en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20871
dc.identifier.wosnumberWOS:000293710400035
dc.language.isoen_USen_US
dc.subjectCurrent spreadingen_US
dc.subjectefficiency droopen_US
dc.subjecthigh voltageen_US
dc.subjectlight-emitting diodesen_US
dc.titleEfficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodesen_US
dc.typeArticleen_US

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