Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current Ratio
| dc.citation.epage | 1235 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1233 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Wu, Yi-Hong | en_US |
| dc.contributor.author | Kuo, Po-Yi | en_US |
| dc.contributor.author | Lu, Yi-Hsien | en_US |
| dc.contributor.author | Chen, Yi-Hsuan | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:00Z | |
| dc.date.available | 2014-12-08T15:48:00Z | |
| dc.date.issued | 2010-11-01 | en_US |
| dc.description.abstract | We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and ON state. The OFF-state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n(+) floating-region length. The ON-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm(2)/ V . s), and large ON/OFF-current ratio of more than 109 (I(OFF) = 4 x 10 (14), I(ON) = 7 x 10 (5), and W(mask)/L(mask) = 10 mu m/3 mu m). | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2061215 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2061215 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32032 | |
| dc.identifier.wosnumber | WOS:000283448300020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Ni-salicided | en_US |
| dc.subject | polycrystalline silicon thin-film transistors (poly-Si TFTs) | en_US |
| dc.subject | symmetric S/D | en_US |
| dc.subject | vertical channel | en_US |
| dc.title | Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current Ratio | en_US |
| dc.type | Article | en_US |