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ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES

dc.citation.epage303en_US
dc.citation.issue7en_US
dc.citation.spage301en_US
dc.citation.volume10en_US
dc.citation.woscount11
dc.contributor.authorWU, JSen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorWANG, YHen_US
dc.contributor.authorKAI, Fen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:48Z
dc.date.available2014-12-08T15:05:48Z
dc.date.issued1989-07-01en_US
dc.identifier.doi10.1109/55.29659en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.29659en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4336
dc.identifier.wosnumberWOS:A1989AD91400006
dc.language.isoen_USen_US
dc.titleORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESen_US
dc.typeArticleen_US

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