遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究
| dc.contributor.author | 李威儀 | en_US |
| dc.contributor.author | LEE WEI-I | en_US |
| dc.contributor.department | 交通大學電子物理系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:49Z | |
| dc.date.available | 2014-12-13T10:37:49Z | |
| dc.date.issued | 1998 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC87-2112-M009-005 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=369933&docId=66430 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94882 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 垂直型二流式磊晶系統 | zh_TW |
| dc.subject | 遠距電漿輔助磊晶 | zh_TW |
| dc.subject | GaN | en_US |
| dc.subject | Vertical-type two-flow reactor | en_US |
| dc.subject | Plasma-enhanced deposition | en_US |
| dc.title | 遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究 | zh_TW |
| dc.title | Studies of Surface Reactions in GaN Growths in a Two-Flow Vertical Reactor and in a Remote Plasma-Enhanced Deposition System | en_US |
| dc.type | Plan | en_US |