High-Performance and Highly Durable Inverted Organic Photovoltaics Embedding Solution-Processable Vanadium Oxides as an Interfacial Hole-Transporting Layer
| dc.citation.epage | + | en_US |
| dc.citation.issue | 33 | en_US |
| dc.citation.spage | 3859 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 73 | |
| dc.contributor.author | Chen, Chih-Ping | en_US |
| dc.contributor.author | Chen, Yeu-Ding | en_US |
| dc.contributor.author | Chuang, Shih-Ching | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:27:13Z | |
| dc.date.available | 2014-12-08T15:27:13Z | |
| dc.date.issued | 2011-09-01 | en_US |
| dc.description.abstract | Inverted OPV devices based on sol-gel derived vanadium oxides (VO(x)) as an interfacial layer are demonstrated. The VO(x) shows excellent characteristics as a hole-transporting and protecting layer. The constructed devices exhibit enhanced performance with the studied polymers and are highly durable under accelerated conditions for long time periods. | en_US |
| dc.identifier.doi | 10.1002/adma.201102142 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.201102142 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19448 | |
| dc.identifier.wosnumber | WOS:000295200400019 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-Performance and Highly Durable Inverted Organic Photovoltaics Embedding Solution-Processable Vanadium Oxides as an Interfacial Hole-Transporting Layer | en_US |
| dc.type | Article | en_US |