Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
| dc.citation.epage | 1203 | en_US |
| dc.citation.issue | 14 | en_US |
| dc.citation.volume | 24 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Lin, Meng-Yu | en_US |
| dc.contributor.author | Wu, Shung-Yi | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:28Z | |
| dc.date.available | 2014-12-08T15:23:28Z | |
| dc.date.issued | 2012-07-15 | en_US |
| dc.description.abstract | The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application. | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16429 | |
| dc.identifier.wosnumber | WOS:000305254000011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | GaSb quantum rings (QR) | en_US |
| dc.subject | light-emitting diodes (LEDs) | en_US |
| dc.title | Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings | en_US |
| dc.type | Article | en_US |