Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate
| dc.citation.epage | R22 | en_US |
| dc.citation.spage | R20 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chang, Tai-Min | en_US |
| dc.contributor.author | Fang, Hsin-Kai | en_US |
| dc.contributor.author | Liao, Cheng | en_US |
| dc.contributor.author | Hsu, Wen-Yang | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-07-21T08:29:03Z | |
| dc.date.available | 2015-07-21T08:29:03Z | |
| dc.date.issued | 2015-01-01 | en_US |
| dc.description.abstract | Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/2.0101502jss | en_US |
| dc.identifier.issn | 2162-8769 | en_US |
| dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.0101502jss | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124225 | |
| dc.identifier.wosnumber | WOS:000348412100015 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate | en_US |
| dc.type | Article | en_US |
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